SK hynix plans HBM5, GDDR7-next, DDR6 by 2031
SK hynix has outlined plans for memory and storage technologies extending through 2031, with announcements covering high-bandwidth memory advancements and next-generation DRAM standards. The South Korean manufacturer presented its development timeline at the SK AI Summit 2025, dividing initiatives into two phases spanning 2026 through 2028 and 2029 through 2031.
The company will introduce HBM4 and HBM4E variants during the initial period, followed by HBM5 and HBM5E products in the later timeframe. A custom HBM design relocates controller functions to the base die, allowing chip manufacturers to expand computing silicon while reducing power consumption. For graphics memory, GDDR7-next appears on the roadmap for 2029 through 2031, suggesting current GDDR7 technology will remain standard for discrete graphics cards through 2028. DDR6 memory for desktop and laptop computers falls within the same distant timeframe.
Storage plans include NAND flash exceeding 400 layers using 4D architecture and High-Bandwidth Flash technology targeting artificial intelligence applications. The manufacturer also detailed specialized AI-focused memory products across multiple categories, ranging from low-power optimized solutions to ultra-high-capacity configurations designed for robotics and industrial automation.
